• DocumentCode
    3445460
  • Title

    HfSiON-CMOSFET technology for low standby power application

  • Author

    Takayanagi, M. ; Watanabe, T. ; Iijima, R. ; Koyama, M. ; Koike, M. ; Ino, T. ; Kamimuta, Y. ; Sekine, K. ; Eguchi, K. ; Nishiyama, A. ; Ishimaru, K.

  • Author_Institution
    SoC R&D Center, Toshiba Corp. Semicond. Co., Yokohama
  • fYear
    2005
  • fDate
    5-5 Dec. 2005
  • Firstpage
    882
  • Lastpage
    885
  • Abstract
    Impact of implementation of HfSiON as a gate dielectric on sub-100 nm generation CMOSFET is reviewed. It is revealed that most parameters are affected when HfSiON with high Hf concentration is used, and thus, careful re-engineering is indispensable. We demonstrate HfSiON-CMOSFET for hp 65 nm LSTP application which meets the specification of ITRS roadmap by an adequate re-engineering
  • Keywords
    CMOS integrated circuits; MOSFET; dielectric materials; hafnium compounds; low-power electronics; silicon compounds; 100 nm; 65 nm; HfSiON; HfSiON-CMOSFET technology; ITRS roadmap; LSTP application; gate dielectric; low standby power application; Dielectrics; Electrodes; Electronic mail; Hafnium oxide; MOS capacitors; Manufacturing processes; Power engineering and energy; Research and development; Semiconductor device manufacture; Thermal stability;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International
  • Conference_Location
    Washington, DC
  • Print_ISBN
    0-7803-9268-X
  • Type

    conf

  • DOI
    10.1109/IEDM.2005.1609499
  • Filename
    1609499
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3445460