DocumentCode :
3445520
Title :
Contact resistance to Al-doped ZnO thin films
Author :
Shih, Ishiang ; Chen, Yi ; Shih, Jeanne-Louise ; Myers, Hadley ; Champness, Clifford ; Yang, Han-Jen
Author_Institution :
Dept. of Electr. & Comput. Eng., McGill Univ., Montreal, QC, Canada
fYear :
2009
fDate :
7-12 June 2009
Abstract :
Polycrystalline ZnO thin films doped with Al are used as transparent conducting oxide (TCO) for solar cells. For such applications, it is necessary to have control on the contact resistance with metals. In this project, we observed the variation of contact resistance of Au/Ti to Al-doped ZnO thin films with sheet resistance.
Keywords :
II-VI semiconductors; aluminium; contact resistance; semiconductor thin films; solar cells; wide band gap semiconductors; zinc compounds; ZnO:Al; contact resistance; polycrystalline thin films; semiconductor thin films; sheet resistance; solar cells; transparent conducting oxide; Coatings; Contact resistance; III-V semiconductor materials; Optical reflection; Optical refraction; Optical surface waves; Photovoltaic cells; Solar energy; Transistors; Zinc oxide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE
Conference_Location :
Philadelphia, PA
ISSN :
0160-8371
Print_ISBN :
978-1-4244-2949-3
Electronic_ISBN :
0160-8371
Type :
conf
DOI :
10.1109/PVSC.2009.5411496
Filename :
5411496
Link To Document :
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