DocumentCode
3445520
Title
Contact resistance to Al-doped ZnO thin films
Author
Shih, Ishiang ; Chen, Yi ; Shih, Jeanne-Louise ; Myers, Hadley ; Champness, Clifford ; Yang, Han-Jen
Author_Institution
Dept. of Electr. & Comput. Eng., McGill Univ., Montreal, QC, Canada
fYear
2009
fDate
7-12 June 2009
Abstract
Polycrystalline ZnO thin films doped with Al are used as transparent conducting oxide (TCO) for solar cells. For such applications, it is necessary to have control on the contact resistance with metals. In this project, we observed the variation of contact resistance of Au/Ti to Al-doped ZnO thin films with sheet resistance.
Keywords
II-VI semiconductors; aluminium; contact resistance; semiconductor thin films; solar cells; wide band gap semiconductors; zinc compounds; ZnO:Al; contact resistance; polycrystalline thin films; semiconductor thin films; sheet resistance; solar cells; transparent conducting oxide; Coatings; Contact resistance; III-V semiconductor materials; Optical reflection; Optical refraction; Optical surface waves; Photovoltaic cells; Solar energy; Transistors; Zinc oxide;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE
Conference_Location
Philadelphia, PA
ISSN
0160-8371
Print_ISBN
978-1-4244-2949-3
Electronic_ISBN
0160-8371
Type
conf
DOI
10.1109/PVSC.2009.5411496
Filename
5411496
Link To Document