Demonstration of recessed SiGe S/D and inserted metal gate on HfO/sub 2/ for high performance pFETs.

Author

Verheyen, P. ; Eneman, G. ; Rooyackers, R. ; Loo, R. ; Eeckhout, L. ; Rondas, D. ; Leys, F. ; Snow, J. ; Shamiryan, D. ; Demand, M. ; Hoffman, Th.Y. ; Goodwin, M. ; Fujimoto, H. ; Ravit, C. ; Lee, B.-C. ; Caymax, M. ; De Meyer, K. ; Absil, P. ; Jurczak, M

Author_Institution

IMEC, Heverlee

fYear

2005

fDate

5-5 Dec. 2005

Firstpage

886

Lastpage

889

Abstract

This paper demonstrates for the first time the integration of an HfO₂/TiN/poly gate stack and a recessed SiGe S/D module. It also shows that by combining the SiGe stressor with a compressive nitride contact etch stop layer, it is possible to reach improvements in I_DSAT of up to 65%, showing that the various strain mechanisms are additive on advanced gate stacks. This way an I_DSAT of 422 muA/mum at 20pA/mum I _OFF and V_DD = 1.1 V can be obtained when a 25% SiGe S/D module is combined with a 1.5 GPa compressive sCESL layer

Keywords

Ge-Si alloys; etching; field effect transistors; hafnium compounds; titanium compounds; 1.5 GPa; HfO₂-TiN; SiGe; SiGe stressor; compressive nitride contact; compressive sCESL layer; etch stop layer; gate stacks; high performance pFET; inserted metal gate; poly gate stack; recessed SiGe S/D module; strain mechanisms; Annealing; Dielectrics; Electrodes; Etching; Germanium silicon alloys; Hafnium oxide; Implants; Silicidation; Silicon germanium; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International

Conference_Location

Washington, DC

Print_ISBN

0-7803-9268-X

Type

conf

DOI

10.1109/IEDM.2005.1609500

Filename

1609500