DocumentCode :
3445584
Title :
Direct measurement of carrier profiles in operating sub-30-nm N-MOSFETs
Author :
Fukutome, H. ; Momiyama, Y. ; Yoshida, E. ; Okuno, M. ; Itakura, T. ; Aoyama, T.
Author_Institution :
Fujitsu Labs. Ltd., Tokyo
fYear :
2005
fDate :
5-5 Dec. 2005
Lastpage :
897
Abstract :
We directly evaluated the carrier profile in an operating sub-30-nm n-MOSFET for the first time. The revealed channel profile, including the halo implant covered by the depletion layer, was utilized to increase the n-MOSFET current to 870 muA/mum Idsat at 100 nA/mum Ioff for Vdd = 1 V at Lpoly = 26 nm
Keywords :
MOSFET; nanotechnology; sputter etching; N-MOSFET; carrier profiles; channel profile; depletion layer; direct measurement; halo implant; nanoelectronics; Electrodes; Electronic mail; Fabrication; Fluctuations; Implants; Laboratories; MOSFET circuits; Microscopy; Threshold voltage; Tunneling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-9268-X
Type :
conf
DOI :
10.1109/IEDM.2005.1609502
Filename :
1609502
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3445584
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