• DocumentCode
    3445584
  • Title

    Direct measurement of carrier profiles in operating sub-30-nm N-MOSFETs

  • Author

    Fukutome, H. ; Momiyama, Y. ; Yoshida, E. ; Okuno, M. ; Itakura, T. ; Aoyama, T.

  • Author_Institution
    Fujitsu Labs. Ltd., Tokyo
  • fYear
    2005
  • fDate
    5-5 Dec. 2005
  • Lastpage
    897
  • Abstract
    We directly evaluated the carrier profile in an operating sub-30-nm n-MOSFET for the first time. The revealed channel profile, including the halo implant covered by the depletion layer, was utilized to increase the n-MOSFET current to 870 muA/mum Idsat at 100 nA/mum Ioff for Vdd = 1 V at Lpoly = 26 nm
  • Keywords
    MOSFET; nanotechnology; sputter etching; N-MOSFET; carrier profiles; channel profile; depletion layer; direct measurement; halo implant; nanoelectronics; Electrodes; Electronic mail; Fabrication; Fluctuations; Implants; Laboratories; MOSFET circuits; Microscopy; Threshold voltage; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International
  • Conference_Location
    Washington, DC
  • Print_ISBN
    0-7803-9268-X
  • Type

    conf

  • DOI
    10.1109/IEDM.2005.1609502
  • Filename
    1609502
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3445584