Title :
Drive current enhancement in high-K/metal gate germanium-carbide pMOSFETs fabricated directly on Si substrates
Author :
Kelly, David Q. ; Donnelly, Joseph P. ; Joshi, Sachin V. ; Dey, Sagnik ; Gutiérrez, Domingo I García ; Yacamán, Miguel José ; Banerjee, Sanjay K.
Author_Institution :
Microelectron. Res. Center, Texas Univ., Austin, TX
Abstract :
High-k/metal gate pMOSFETs were fabricated on high-quality Ge1-xCx for the first time. Ge1-xCx layers with very low RMS roughness of ~3Aring were grown directly on Si by ultra-high-vacuum chemical vapor deposition (UHVCVD), without the use of relaxed Si1-xGex virtual substrates. Ge1-xCx buried-channel (BC) and surface-channel (SC) pMOSFETs with EOT = 1.9 nm and L = 10 mum exhibited high drive currents of 10.8 and 15.2 muA/mum, respectively, for VGS-VT = -1.0 V. Compared to Si control devices, the BC pMOSFETs showed 2times enhancement in IDsat and 1.6times enhancement in the transconductance (G m). The corresponding enhancements for the SC devices were 3times and 2times, respectively. These results represented an effective hole mobility enhancement of ~1.5times for the BC devices and ~2.5times for the SC devices over the universal curve for Si
Keywords :
Ge-Si alloys; MOSFET; chemical vapour deposition; germanium compounds; high-k dielectric thin films; hole mobility; semiconductor devices; -1.0 V; BC pMOSFET; Ge1-xCx; SC pMOSFET; Si1-xGex; UHVCVD; buried-channel; drive current enhancement; high-k/metal gate germanium-carbide; hole mobility enhancement; surface-channel; ultra-high-vacuum chemical vapor deposition; very low RMS roughness; virtual substrates; Bonding; Chemical engineering; Dielectric substrates; High K dielectric materials; High-K gate dielectrics; MOS devices; MOSFETs; Microelectronics; Rough surfaces; Surface roughness;
Conference_Titel :
Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-9268-X
DOI :
10.1109/IEDM.2005.1609504
