Title :
2-bit poly-Si-TFT nonvolatile memory using hafnium oxide, hafnium silicate and zirconium silicate
Author :
Lin, Yu-Hsien ; Chien, Chao-Hsin ; Chou, Tung-Hung ; Chao, Tien-Sheng ; Chang, Chun-Yen ; Lei, Tan-Fu
Author_Institution :
Inst. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu
Abstract :
In this paper, the authors, for the first time, have successfully fabricated SONOS-type poly-Si-TFT memories employing three kinds of high-k dielectrics, including HfO2, Hf-silicate and Zr-silicate, as the trapping layer with low-thermal budget processing. It was demonstrated that the fabricated memories exhibit good performance in terms of relatively large memory window, high program/erase speed (1ms/10ms), long retention time (>106s for 20% charge loss) and negligible read/write disturbances. In particular, 2-bit operation has been successfully demonstrated
Keywords :
hafnium compounds; high-k dielectric thin films; random-access storage; thin film transistors; zirconium compounds; HfO2; SONOS memories; hafnium silicate; high-k dielectrics; nonvolatile memory; thermal budget processing; thin film transistor; trapping layer; zirconium silicate; Chaos; Fabrication; Hafnium oxide; High-K gate dielectrics; Laboratories; Nonvolatile memory; Read-write memory; Silicon; Thin film transistors; Zirconium;
Conference_Titel :
Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-9268-X
DOI :
10.1109/IEDM.2005.1609511
