Title :
100 MHz CMOS circuits using sequential laterally solidified silicon thin-film transistors on plastic
Author :
Kane, M.G. ; Goodman, L. ; Firester, A.H. ; van der Wilt, P.C. ; Limanov, A.B. ; Im, J.S.
Author_Institution :
Sarnoff Corp., Princeton, NJ
Abstract :
We have fabricated CMOS circuits using sequential laterally solidified silicon TFTs on plastic substrates. NMOS devices have unity-gain frequencies greater than 250 MHz, and CMOS ring oscillators operate at 100 MHz. To our knowledge these are the highest performance transistors and the fastest circuits ever fabricated directly on plastic
Keywords :
CMOS integrated circuits; VHF oscillators; plastics; substrates; thin film transistors; 100 MHz; CMOS circuits; plastic substrates; ring oscillators; silicon on plastic; thin-film transistors; Circuits; Crystallization; MOS devices; Mathematics; Physics; Plastics; Semiconductor films; Silicon; Thin film transistors; Threshold voltage;
Conference_Titel :
Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-9268-X
DOI :
10.1109/IEDM.2005.1609514
