Title :
A 4 Gs/s comparator fabricated in an AlGaAs/GaAs heterojunction bipolar process
Author :
Cepl, F. ; Baureis, P. ; Seitzer, D. ; Zwicknagl, P.
Author_Institution :
Fraunhofer-Inst. for Integrated Circuits, Erlangen, Germany
Abstract :
A comparator circuit fabricated in an AlGaAs/GaAs heterojunction bipolar process is described. Nonlinear current gain, thermal effects, and parasitic base collector resistance have been included in the simulation model. The simulation model has been verified with measured data, which show a good match with data predicted by the simulation. At sampling rates up to 4 Gb/s at full Nyquist input frequency, the applicability of the comparator for high-speed analog-digital converters has been shown. Power consumption and input bias current must be taken into account when using it in high-resolution flash converters
Keywords :
III-V semiconductors; aluminium compounds; bipolar integrated circuits; comparators (circuits); equivalent circuits; gallium arsenide; heterojunction bipolar transistors; semiconductor device models; AlGaAs-GaAs; comparator circuit; heterojunction bipolar process; high-resolution flash converters; high-speed ADC; nonlinear current gain; parasitic base collector resistance; simulation model; thermal effects; Analog-digital conversion; Circuit simulation; Electrical resistance measurement; Energy consumption; Frequency conversion; Gallium arsenide; Heterojunctions; Predictive models; Sampling methods; Thermal resistance;
Conference_Titel :
Bipolar Circuits and Technology Meeting, 1991., Proceedings of the 1991
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-0103-X
DOI :
10.1109/BIPOL.1991.160952
