DocumentCode
3446021
Title
Mechanism of nonlinearity in semiconductor doped glasses using Z-scan method
Author
Bindra, K.S. ; Kar, A.K.
Author_Institution
Dept. of Phys., Heriot-Watt Univ., Edinburgh, UK
fYear
2001
fDate
11-11 May 2001
Firstpage
149
Lastpage
150
Abstract
Summary form only given. The third-order nonlinearity in the transparency region (2/spl planck//spl omega/\n\n\t\t
Keywords
II-VI semiconductors; cadmium compounds; multiwave mixing; nanostructured materials; nonlinear optics; optical pulse generation; semiconductor doped glasses; transparency; two-photon processes; CdS/sub x/Se/sub 1-x/ nanoparticle doped glasses; DFWM; SDGs; Z-scan method; carrier generation; degenerate four wave mixing; fifth-order nonlinearity; intrinsic third-order electronic nonlinearity; nondegenerate four wave mixing; nonlinear refraction; nonlinearity mechanism; positive third-order nonlinearity signature; pulses; semiconductor doped glasses; simulated data; third-order nonlinearity; transparency region; two-photon absorption; Absorption; Chemical lasers; Glass; Laser excitation; Memory; Nonlinear optics; Optical mixing; Optical refraction; Optical saturation; Optimized production technology;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2001. CLEO '01. Technical Digest. Summaries of papers presented at the Conference on
Conference_Location
Baltimore, MD, USA
Print_ISBN
1-55752-662-1
Type
conf
DOI
10.1109/CLEO.2001.947629
Filename
947629
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