Title :
2 /spl mu/m emission from Si/Ge heterojunction LED and up to 1.55 /spl mu/m detection by GOI detectors with strain-enhanced features
Author :
Liao, M.H. ; Yu, C.Y. ; Huang, C.F. ; Lin, C.H. ; Lee, C.-J. ; Yu, M.H. ; Chang, S.T. ; Liang, C.Y. ; Lee, C.-Y. ; Guo, T.H. ; Chang, C.C. ; Liu, C.W.
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei
Abstract :
The Ge/Si heterojunction MOS LED can emit ~2 mum light due to the radiative recombination at type II heterojunction. The fully depleted 800 nm germanium on insulator (GOI) can increase the responsivity and the speed of the MOS detector due to the large absorption of Ge and the electrical field in the active layer, respectively. Moreover, the external strain can tune the emission energy (~11 meV) by modifying the band structure. The responsivity of GOI MOS detector is also improved by ~10% using the external strain. Both heterojunction and strain (internal or external) can enhance the performance of Si-based optoelectronics
Keywords :
Ge-Si alloys; MIS devices; integrated optoelectronics; light emitting diodes; photodetectors; semiconductor heterojunctions; 2 micron; 800 nm; GOI detectors; MOS detector; SiGe; electrical field; germanium on insulator; heterojunction MOS LED; optoelectronics; strain-enhanced features; Absorption; Capacitive sensors; Computer vision; Detectors; Electrodes; Heterojunctions; Light emitting diodes; Photodetectors; Substrates; Tunneling;
Conference_Titel :
Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-9268-X
DOI :
10.1109/IEDM.2005.1609532
