DocumentCode
3446253
Title
Dislocation engineering for a silicon-based light emitter at 1.5 /spl mu/
Author
Kittler, M. ; Reiche, M. ; Arguirov, T. ; Seifert, W. ; Yu, X.
Author_Institution
IHP Microelectron., Frankfurt
fYear
2005
fDate
5-5 Dec. 2005
Firstpage
1005
Lastpage
1008
Abstract
A new concept for a Si light emitting diode (LED) capable of emitting at 1.5 mum efficiently is proposed. It utilizes radiation from a well-defined dislocation network created in a reproducible manner by Si wafer direct bonding. The wavelength of the light emitted from the network can be tailored by adjusting the misorientation between the Si wafers
Keywords
annealing; dislocation structure; elemental semiconductors; ion implantation; light emitting diodes; silicon; wafer bonding; 1.5 micron; Si; dislocation engineering; light emitting diode; wafer direct bonding; Annealing; Boron; CMOS technology; Ion implantation; Light emitting diodes; Light sources; Optical modulation; Stimulated emission; Temperature; Wafer bonding;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International
Conference_Location
Washington, DC
Print_ISBN
0-7803-9268-X
Type
conf
DOI
10.1109/IEDM.2005.1609533
Filename
1609533
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