• DocumentCode
    3446286
  • Title

    Theoretical investigation on optimum bandgap energies of Ge-Based III–V Triple-Junction solar cells for long-term energy production on mars

  • Author

    Hoheisel, R. ; Philipps, S.P. ; Dimroth, F. ; Bett, A.W.

  • Author_Institution
    Fraunhofer Inst. for Solar Energy Syst., Freiburg, Germany
  • fYear
    2009
  • fDate
    7-12 June 2009
  • Abstract
    Based on theoretical considerations, optimum triple-junction bandgap combinations are determined to achieve highest electrical energy production for a long-term mission on the Martian surface. The solar cell structures analyzed in this contribution are based on the GaInP/GaInAs/Ge material system. Realistic ambient temperature and atmospheric dust profiles as well as spectral illumination conditions as observed on the Martian surface are considered. The variation of optimum bandgap combinations during the yearly cycle is discussed with respect to the environmental parameters.
  • Keywords
    III-V semiconductors; Mars; elemental semiconductors; energy gap; gallium compounds; germanium; indium compounds; solar cells; GaInP-GaInAs-Ge; III-V triple junction solar cells; Mars; Martian surface; electrical energy production; long term energy production; long term mission; optimum bandgap energies; spectral illumination; Information analysis; Mars; Photonic band gap; Photovoltaic cells; Production; Solar power generation; Space missions; Storms; Sun; Temperature distribution;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE
  • Conference_Location
    Philadelphia, PA
  • ISSN
    0160-8371
  • Print_ISBN
    978-1-4244-2949-3
  • Electronic_ISBN
    0160-8371
  • Type

    conf

  • DOI
    10.1109/PVSC.2009.5411557
  • Filename
    5411557