DocumentCode
3446463
Title
Preparation of Quantum Hall Effect Device Arrays
Author
Hein, G. ; Schumacher, B. ; Ahlers, F.J.
Author_Institution
Phys.-Technische Bundesanstalt, Braunschweig
fYear
2004
fDate
38139
Firstpage
273
Lastpage
274
Abstract
The preparation of quantum Hall effect device arrays at the PTB using multiterminal connections has been improved by the use of SiO2 as insulation material for the multilayer connections. The used lay-out avoids connections crossing the active sections of the devices. Arrays with ten devices in series as well as in parallel have been realised and successfully tested
Keywords
Hall effect devices; electric resistance measurement; quantum Hall effect; SiO2; insulation material; multilayer connections; multiterminal connections; quantum Hall effect device; Circuit noise; Etching; Gold; Hall effect devices; Insulation; Magnetic field measurement; Resistors; Testing; Voltage; Wires;
fLanguage
English
Publisher
ieee
Conference_Titel
Precision Electromagnetic Measurements Digest, 2004 Conference on
Conference_Location
London
Print_ISBN
0-7803-8494-6
Electronic_ISBN
0-7803-8494-6
Type
conf
DOI
10.1109/CPEM.2004.305569
Filename
4097224
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