• DocumentCode
    3446517
  • Title

    Program and SILC constraints on NC memories scaling: a monte carlo approach

  • Author

    Gusmeroli, R. ; Spinelli, A.S. ; Compagnoni, C. Monzio ; Ielmini, D. ; Morelli, F. ; Lacaita, A.L.

  • Author_Institution
    Dipt. di Elettronica e Informazione, Politecnico di Milano
  • fYear
    2005
  • fDate
    5-5 Dec. 2005
  • Firstpage
    1038
  • Lastpage
    1041
  • Abstract
    We performed 3D Monte Carlo simulations of SOI NAND nanocrystal memories investigating the scaling constraints due to both program failure and reliability concerns. We show that the NC density should be optimized as a trade-off between number fluctuation and SILC immunity and that proper optimization is needed in order to meet the 45 nm ITRS node requirements
  • Keywords
    Monte Carlo methods; leakage currents; nanoelectronics; semiconductor storage; silicon-on-insulator; 3D Monte Carlo simulations; 45 nm; NC density; NC memories; SILC constraints; SILC immunity; SOI NAND nanocrystal memories; program failure; stress-induced leakage current; Electrons; Fluctuations; Leakage current; Memory management; Monte Carlo methods; Nanocrystals; Nonvolatile memory; Quantization; Robustness; Scalability;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International
  • Conference_Location
    Washington, DC
  • Print_ISBN
    0-7803-9268-X
  • Type

    conf

  • DOI
    10.1109/IEDM.2005.1609542
  • Filename
    1609542
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3446517