DocumentCode
3446588
Title
Contents
fYear
2005
fDate
17-20 Oct. 2005
Abstract
Presents the table of contents of the proceedings.
Keywords
Breakdown voltage; Copper; Degradation; High K dielectric materials; High-K gate dielectrics; MOSFETs; Niobium compounds; Nonvolatile memory; Stress; Titanium compounds;
fLanguage
English
Publisher
ieee
Conference_Titel
Integrated Reliability Workshop Final Report, 2005 IEEE International
Conference_Location
S. Lake Tahoe, CA
Print_ISBN
0-7803-8992-1
Type
conf
DOI
10.1109/IRWS.2005.1609547
Filename
1609547
Link To Document