Combined effect of NBTI and channel hot carrier effects in pMOSFETs

This work shows that the channel hot carrier (CHC) degradation for a p-MOSFET consists of two different regimes. At low V_g, the degradation is dominated by hot electrons produced by impact ionization. The hot electrons are responsible for the creation of both interface traps and electron traps within the oxide. At high V_g, a NBT-induced hot carrier effect is evidenced as well as an anomalous CHC effect. This work should help understanding the CHC degradation of pMOSFET as well as determining the worst case degradation.