Title :
Silicon nanorods / P3HT hybrid solar cells
Author :
Ma, Yanhong ; Liu, Fengzhen ; Zhu, Meifang ; Liu, Jinlong ; Yang, Yi ; Li, Yongfang ; Zhang, Zhanjun
Author_Institution :
Grad. Univ. of Chinese Acad. of Sci., Beijing, China
Abstract :
Vertically oriented Si nanorods (SiNRs) grown on different substrates were successfully obtained by hot wire chemical vapor deposition (HWCVD) with the glancing angle incident silane flux. The organic-inorganic hybrid solar cells were fabricated by spin coating 3-hexylthiophene (P3HT) into the SiNRs array with the average length of ~200 nm and average separation of ~10 nm. The P3HT shows well penetration into the SiNRs. The materials and the devices were characterized by the absorption and photoluminescence (PL) spectra. The PL peak intensity of P3HT decreased after P3HT penetrating into SiNRs, which probably is due to the charge transfer between the SiNRs and P3HT and the interfacial recombination of carriers. The best hybrid solar cell to-date shows a power conversion efficiency of 0.2% under AM 1.5 illumination for the active area of 1 cm à 1 cm.
Keywords :
chemical vapour deposition; conducting polymers; elemental semiconductors; nanofabrication; nanostructured materials; photoluminescence; polymer films; semiconductor growth; silicon; solar cells; 3-hexylthiophene; Si; absorption spectra; carrier interfacial recombination; charge transfer; glancing angle incident silane flux; hot wire chemical vapor deposition; organic-inorganic hybrid solar cells; photoluminescence spectra; spin coating; vertically oriented si nanorods; Absorption; Charge transfer; Chemical vapor deposition; Coatings; Photoluminescence; Photovoltaic cells; Power conversion; Signal to noise ratio; Silicon; Wire;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE
Conference_Location :
Philadelphia, PA
Print_ISBN :
978-1-4244-2949-3
Electronic_ISBN :
0160-8371
DOI :
10.1109/PVSC.2009.5411604