Optical and electrical properties of ZnO thin films synthesized by sol-gel method for the application in three-dimensional junction photovoltaics

Author

Jun, Woosuk ; Kim, Hong Tak ; Kim, Dongwook ; Park, Chinho

Author_Institution

Sch. of Display & Chem. Eng., Yeungnam Univ., Gyeongsan, South Korea

fYear

2009

fDate

7-12 June 2009

Abstract

In this study, we investigated the properties of ZnO nanostructures grown by a sol-gel method on glass substrates. First, the seed layer of ZnO were formed using zinc acetate dihydrate (Zn(CH₃COOH)₂Â·2H₂O), 2-propanol (CH₃CH₂ CH₂OH), and sodium hydroxide (NaOH) as precursor material, solvent and sol stabilizer, respectively. The three dimensional ZnO nanostructures were then grown by the CBD(Chemical Bath Deposition) process. The solution was composed of zinc nitrate hexahydrate (Zn(NO₃)2Â·6H₂O) and hexamine (C₆H₁₂N₄). The properties of ZnO nanostructures were investigated by SEM, XRD, and UV-Vis-NIR. We found that the growth temperature and seed layer structure are important factors in controlling the structures of ZnO formed.

Keywords

II-VI semiconductors; X-ray diffraction; nanostructured materials; scanning electron microscopy; semiconductor thin films; sol-gel processing; solar cells; zinc compounds; 2-propanol; 3D junction photovoltaics; UV-vis-NIR; X-ray diffraction; ZnO; ZnO nanostructures; chemical bath deposition process; electrical properties; glass substrates; growth temperature; hexamine; optical properties; precursor material; scanning electron microscopy; seed layer; sodium hydroxide; sol stabilizer; sol-gel method; solvent; thin films; zinc acetate dihydrate; zinc nitrate hexahydrate; Glass; Nanostructures; Optical films; Optical scattering; Optical sensors; Photonic band gap; Photovoltaic cells; Scanning electron microscopy; X-ray scattering; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE

Conference_Location

Philadelphia, PA

ISSN

0160-8371

Print_ISBN

978-1-4244-2949-3

Electronic_ISBN

0160-8371

Type

conf

DOI

10.1109/PVSC.2009.5411605

Filename

5411605