Title :
Effect of moisture on the time dependent dielectric breakdown (TDDB) behavior in an ultra-low-k (ULK) dielectric
Author :
Lloyd, J.R. ; Shaw, T.M. ; Liniger, E.G.
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
In a study of the TDDB performance of an ultra-low-k (ULK) dielectric (JSR 5537 k = 2.3) it was found that the presence of moisture significantly reduced the TDDB lifetime as well as increased leakage and capacitance. It was also observed that the field coefficient (γ) in an "E" TDDB lifetime model was significantly larger in "dry" samples than in "wet" samples.
Keywords :
dielectric materials; electric breakdown; moisture; TDDB behavior; TDDB lifetime model; field coefficient; time dependent dielectric breakdown; ultra-low-k dielectric; Capacitance measurement; Dielectric breakdown; Dielectric constant; Dielectric materials; Humidity; Moisture; Seals; Silicon compounds; Temperature measurement; Testing;
Conference_Titel :
Integrated Reliability Workshop Final Report, 2005 IEEE International
Print_ISBN :
0-7803-8992-1
DOI :
10.1109/IRWS.2005.1609559
