Title :
Silicon-Based, Tunable-Barrier Single Charge Sources
Author :
Zimmerman, Neil M. ; Fujiwara, Akira ; Martin, Stuart ; Ono, Yukinori ; Takahashi, Yasuo
Author_Institution :
National Inst. of Stand. & Technol., Gaithersburg, MD
Abstract :
We have demonstrated the operation of, and are assessing theoretically and experimentally the error rates of, silicon-based single-electron turnstiles, pumps, and CCDs. These devices are conceptually very similar to the metal-based pumps which have already proven to have a very low error rate; potentially, the Si-based devices have several substantial advantages, including higher current value, higher temperature of operation, and simpler operation
Keywords :
charge-coupled devices; errors; pumps; quantum theory; semiconductor device measurement; semiconductor device models; silicon; single electron devices; CCD; error rates; pumps; silicon; single-electron turnstiles; tunable-barrier single charge sources; Capacitance; Electrons; Error analysis; Frequency; Laboratories; MOSFET circuits; Metrology; NIST; Temperature; Voltage;
Conference_Titel :
Precision Electromagnetic Measurements Digest, 2004 Conference on
Conference_Location :
London
Print_ISBN :
0-7803-8494-6
Electronic_ISBN :
0-7803-8494-6
DOI :
10.1109/CPEM.2004.305585
