Diode radial-pumped composite Yb:YAG microchip laser

Author

Pavel, N. ; Saikawa, J. ; Kurimura, S. ; Taira, T.

Author_Institution

Laser Res. Center, Inst. for Molecular Sci., Okazaki, Japan

fYear

2001

fDate

11-11 May 2001

Firstpage

171

Abstract

Summary form only given. The Yb:YAG medium was demonstrated to be a promising candidate for high-power 1-/spl mu/m laser systems, as well as for use in a tunable, single-axial-mode microchip configuration. Yb:YAG has a long-storage lifetime (951 /spl mu/s), a very low quantum defect (8.6%), and the 940-nm absorption in Yb:YAG is nearly ten times broader than that of the 808-nm absorption feature in Nd:YAG. Unlike four-level systems, the quasi-three-level structure of Yb:YAG requires strong pumping to overcome the deleterious effects of lower laser level reabsorption.

Keywords

laser transitions; micro-optics; optical pumping; solid lasers; ytterbium; 808 nm; 940 nm; 951 mus; YAG:Yb; YAl5O12:Yb; Yb:YAG laser medium; absorption feature; diode radial-pumped composite Yb:YAG microchip laser; high-power laser; lower laser level reabsorption; power scalability; quasi-three-level structure; strong pumping; tunable single-axial mode microchip configuration; very low quantum defect; Absorption; Diodes; Doping; Laser excitation; Laser modes; Laser theory; Microchip lasers; Power generation; Pump lasers; Slabs;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2001. CLEO '01. Technical Digest. Summaries of papers presented at the Conference on

Conference_Location

Baltimore, MD, USA

Print_ISBN

1-55752-662-1

Type

conf

DOI

10.1109/CLEO.2001.947668

Filename

947668