Title :
A novel self-aligned epitaxial base transistor
Author :
Fujimaki, H. ; Suzuki, K. ; Umemura, Y. ; Akahane, K.
Author_Institution :
Oki Electric Ind. Co. Ltd., Tokyo, Japan
Abstract :
The authors propose SATURN (self-alignment technology utilizing reserved nitride), a high-speed bipolar LSI technology. An advanced SATURN process, utilizing selective epitaxial technology, has been developed in order to improve the high-speed capability. It makes possible an emitter width of less than 0.4 μm, a base area width of less than 2 μm, and a base width of 1500 Å. Furthermore, a base width of 800 Å was realized by collector phosphorus doping using low-energy ion implantation, just before the deposition of base epitaxy
Keywords :
bipolar integrated circuits; bipolar transistors; integrated circuit technology; ion implantation; large scale integration; 0.2 micron; 0.4 micron; 1500 AA; 800 AA; SATURN; Si:P; Si3N4; collector doping; emitter width; epitaxial base transistor; high-speed bipolar LSI technology; high-speed capability; low-energy ion implantation; reserved nitride; selective epitaxial technology; self-alignment technology; Anisotropic magnetoresistance; Dry etching; Electrodes; Epitaxial growth; Epitaxial layers; Ion implantation; Oxidation; Saturn; Temperature; Transistors;
Conference_Titel :
Bipolar Circuits and Technology Meeting, 1991., Proceedings of the 1991
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-0103-X
DOI :
10.1109/BIPOL.1991.160956
