A novel self-aligned epitaxial base transistor

Author

Fujimaki, H. ; Suzuki, K. ; Umemura, Y. ; Akahane, K.

Author_Institution

Oki Electric Ind. Co. Ltd., Tokyo, Japan

fYear

1991

fDate

9-10 Sep 1991

Firstpage

59

Lastpage

62

Abstract

The authors propose SATURN (self-alignment technology utilizing reserved nitride), a high-speed bipolar LSI technology. An advanced SATURN process, utilizing selective epitaxial technology, has been developed in order to improve the high-speed capability. It makes possible an emitter width of less than 0.4 μm, a base area width of less than 2 μm, and a base width of 1500 Å. Furthermore, a base width of 800 Å was realized by collector phosphorus doping using low-energy ion implantation, just before the deposition of base epitaxy

Keywords

bipolar integrated circuits; bipolar transistors; integrated circuit technology; ion implantation; large scale integration; 0.2 micron; 0.4 micron; 1500 AA; 800 AA; SATURN; Si:P; Si₃N₄; collector doping; emitter width; epitaxial base transistor; high-speed bipolar LSI technology; high-speed capability; low-energy ion implantation; reserved nitride; selective epitaxial technology; self-alignment technology; Anisotropic magnetoresistance; Dry etching; Electrodes; Epitaxial growth; Epitaxial layers; Ion implantation; Oxidation; Saturn; Temperature; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar Circuits and Technology Meeting, 1991., Proceedings of the 1991

Conference_Location

Minneapolis, MN

Print_ISBN

0-7803-0103-X

Type

conf

DOI

10.1109/BIPOL.1991.160956

Filename

160956