Title :
Voltage acceleration of oxide breakdown in the sub-10 nm Fowler-Nordheim and direct tunneling regime
Author :
Duschl, Rainer ; Vollertsen, Rolf-Peter
Author_Institution :
Infineon Technol., Munich, Germany
Abstract :
The TDDB-power-law model was shown to describe the experimental data for nFET and pFET devices in the direct tunneling regime very well. In this work it is investigated whether it can be extended into the voltage range, where elastic Fowler-Nordheim tunneling dominates. Both nFET and pFET devices are investigated and were found to behave different. For nFET a universal power-law expression is proposed for the entire sub-10 nm range.
Keywords :
electric breakdown; field effect transistors; semiconductor device breakdown; semiconductor device models; tunnelling; 10 nm; TDDB-power-law model; direct tunneling regime; elastic Fowler-Nordheim tunneling; nFET device; oxide breakdown; pFET device; time dependent dielectric breakdown; voltage acceleration; Acceleration; Breakdown voltage; Degradation; Dielectrics; Electric breakdown; Extrapolation; Stress; Testing; Thickness measurement; Tunneling;
Conference_Titel :
Integrated Reliability Workshop Final Report, 2005 IEEE International
Print_ISBN :
0-7803-8992-1
DOI :
10.1109/IRWS.2005.1609560
