Double band structure of ZnSe/CdSe/ZnSe quantum dots for photovoltaic devices

Author

Yoshino, Kenji ; Yoneta, M. ; Ohishi, Masakazu ; Saito, Hiroshi

Author_Institution

Dept. of Electr. & Electron. Eng., Univ. of Miyazaki, Miyazaki, Japan

fYear

2009

fDate

7-12 June 2009

Abstract

The ZnSe/CdSe dot/ZnSe/CdSe dot/ZnSe structure is fabricated with changing irradiation time of Cd-beam. Two PL peaks can be observed at 2.782 and 2.762 eV. The intensity of higher energy peak is intense and has narrow FWHM, and the intensity of lower energy peak is weak and has rather broad FWHM. As the increase of Cd irradiation time, both A-peak and B-peak moved towards lower energy side. When the CdSe layer is thinner than an ideal atomic layer epitaxy proceeds in ALS growth, no SK-CdSe dots can be generated.

Keywords

II-VI semiconductors; band structure; cadmium compounds; molecular beam epitaxial growth; photoluminescence; radiation effects; semiconductor epitaxial layers; semiconductor growth; semiconductor quantum dots; wide band gap semiconductors; zinc compounds; Stranski-Krastanov mode; ZnSe-CdSe-ZnSe; alternate molecular beam supply growth; atomic layer epitaxy; changing irradiation time; double band structure; photoluminescence peaks; photovoltaic devices; semiconductor quantum dots; Laser beams; Molecular beam applications; Molecular beam epitaxial growth; Molecular beams; Photonic band gap; Photovoltaic systems; Physics; Quantum dots; Solar power generation; Zinc compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE

Conference_Location

Philadelphia, PA

ISSN

0160-8371

Print_ISBN

978-1-4244-2949-3

Electronic_ISBN

0160-8371

Type

conf

DOI

10.1109/PVSC.2009.5411614

Filename

5411614