• DocumentCode
    3446962
  • Title

    Dependence of of thickness F-doped SnO2 films grown by spray pyrolysis technique

  • Author

    Oshima, Minoru ; Takemoto, Yujin ; Yoshino, Kenji

  • Author_Institution
    Dept. of Electr. & Electr. Eng., Univ. of Miyazaki, Miyazaki, Japan
  • fYear
    2009
  • fDate
    7-12 June 2009
  • Abstract
    Transparent conducting thin films of fluorine-doped SnO2 were deposited on glass substrates by spray pyrolysis technique in order to find out the effect of film thickness. These films were prepared using fluorine concentrations of 4 mol% at substrate temperature of 500°C. Their electrical resistivity decreased although optical transmittance decreased with increasing the film thickness.
  • Keywords
    electrical resistivity; fluorine; glass; pyrolysis; semiconductor thin films; substrates; tin compounds; wide band gap semiconductors; SnO2:F; electrical resistivity; fluorine concentrations; glass substrates; optical transmittance; spray pyrolysis; temperature 500 degC; thickness dependence; thin film growth; transparent conducting thin films; Conductivity; Glass; Numerical analysis; Optical films; Scanning electron microscopy; Semiconductor films; Spraying; Sputtering; Substrates; X-ray scattering;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE
  • Conference_Location
    Philadelphia, PA
  • ISSN
    0160-8371
  • Print_ISBN
    978-1-4244-2949-3
  • Electronic_ISBN
    0160-8371
  • Type

    conf

  • DOI
    10.1109/PVSC.2009.5411615
  • Filename
    5411615