DocumentCode
3447045
Title
High-speed epitaxial base transistors on bonded SOI
Author
Kojima, M. ; Fukuroda, A. ; Fukano, T. ; Higaki, N. ; Yamazaki, T. ; Sugii, T. ; Arimoto, Y. ; Ito, T.
Author_Institution
Fujitsu Lab. Ltd., Atsugi, Japan
fYear
1991
fDate
9-10 Sep 1991
Firstpage
63
Lastpage
66
Abstract
The authors propose fully isolated high-speed bipolar transistors using a photoepitaxial base and wafer-bonded SOI (silicon-on-insulator). A 0.7-μm-thick buried layer that was highly doped by ion implantation before bonding was formed. Epitaxial base transistors (EBTs) on 1-μm-thick bonded SOI were fabricated. The devices had a cutoff frequency of 32 GHz
Keywords
bipolar integrated circuits; bipolar transistors; integrated circuit technology; ion implantation; semiconductor-insulator boundaries; 32 GHz; bonded SOI; buried layer; epitaxial base transistors; fully isolated; high-speed bipolar transistors; ion implantation; photoepitaxial base; wafer-bonded; Bipolar transistors; Circuits; Etching; Indium tin oxide; Laboratories; Parasitic capacitance; Semiconductor films; Silicon on insulator technology; Wafer bonding; Wiring;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar Circuits and Technology Meeting, 1991., Proceedings of the 1991
Conference_Location
Minneapolis, MN
Print_ISBN
0-7803-0103-X
Type
conf
DOI
10.1109/BIPOL.1991.160957
Filename
160957
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