• DocumentCode
    3447132
  • Title

    Surface plasmon enhancement of optical absorption of thin film a-Si:H solar cells

  • Author

    Biswas, R. ; Zhou, D. ; Curtin, B. ; Chakravarty, N. ; Dalal, V.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Iowa State Univ., Ames, IA, USA
  • fYear
    2009
  • fDate
    7-12 June 2009
  • Abstract
    We design and fabricate a-Si:H solar cells with plasmonic crystal back reflectors demonstrating enhanced absorption of near infrared photons. Rigorous simulations predict plasmonic nanoparticles on ITO can increase absorption in the near infrared. Rigorous simulations also predict plasmonic crystal back reflectors with a pitch of ~750 nm to optimize the enhanced absorption. Such periodic back reflectors have been fabricated with photolithography and a-Si:H solar cells have been grown on them by PECVD. The solar cells display ~9% improvement in short circuit current and external quantum efficiency and a absorption enhancement factor exceeding 8 above 650 nm.
  • Keywords
    elemental semiconductors; hydrogen; indium compounds; nanoparticles; nanophotonics; optical elements; optical fabrication; photolithography; plasmonics; semiconductor thin films; short-circuit currents; silicon; solar cells; surface plasmons; thin film devices; tin compounds; Si:H-ITO-Jk; absorption enhancement factor; external quantum efficiency; near infrared photons; optical absorption; photolithography; plasmonic crystal back reflectors; plasmonic nanoparticles; rigorous simulations; short circuit current; surface plasmon; thin film solar cells; Circuit simulation; Electromagnetic wave absorption; Indium tin oxide; Lithography; Nanoparticles; Optical films; Photonic crystals; Photovoltaic cells; Plasmons; Predictive models;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE
  • Conference_Location
    Philadelphia, PA
  • ISSN
    0160-8371
  • Print_ISBN
    978-1-4244-2949-3
  • Electronic_ISBN
    0160-8371
  • Type

    conf

  • DOI
    10.1109/PVSC.2009.5411623
  • Filename
    5411623