Thickness and temperature effects on TDDB for DC and dynamic stressing of thin oxide

In this paper we report the temperature dependence behavior of TDDB (Time Dependent Dielectric Breakdown) of both static and dynamic stress for oxide thickness ranging from 40A to 80A. For the first time, the effects on activation energies of TDDB (as extracted from Arrhenius plot) caused by oxide thickness, DC stress injection polarity, and bipolar stressing are reported and compared. Results indicate that AC stressing giving higher TDDB than TDDB of DC stressing, as reported in earlier work, is not always true, and is strongly influenced by the thickness, temperature and injection polarity. Previous results of anomalous breakdown behavior in ultrathin oxide are also shown to be part of a general trend