One time programming device yield study based on anti-fuse gate oxide breakdown on p-type and n-type substrates

Author

Mathur, N. ; Ahn, Y. ; Kouznetov, I. ; Jenne, F. ; Fulford, J.

Author_Institution

CYPRESS Semicond. Inc., Bloomington, MN, USA

fYear

2005

fDate

17-20 Oct. 2005

Abstract

A study on the programming yield of one time programmable (OTP) device based on anti-fuse gate oxide breakdown on p-type and n-type substrates is presented. Charge injection into anti-fuse gate oxide from the substrate during OTP programming can alter device characteristics, which impact the OTP programming yield. Experiments showed higher programming yield with increasing anti-fuse gate read current can be obtained with the OTP device based on anti-fuse gate oxide breakdown on n-type substrate compared to p-type substrate due to less electron-hole pair generation.

Keywords

MOSFET; semiconductor device breakdown; semiconductor device testing; OTP programming yield; anti-fuse gate oxide breakdown; anti-fuse gate read current; charge injection; device characteristics; electron-hole pair generation; n-type substrates; one time programming device; p-type substrates; CMOS process; Capacitors; Electric breakdown; Electronics industry; MOSFET circuits; Mathematical programming; Nonvolatile memory; Semiconductor device breakdown; Silicon; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Reliability Workshop Final Report, 2005 IEEE International

Print_ISBN

0-7803-8992-1

Type

conf

DOI

10.1109/IRWS.2005.1609576

Filename

1609576