IREM usage in the detection of highly resistive failures on 65nm products

Author

Wan, Ifar ; Bockelman, Dan ; Xuan, Yun ; Chen, Steven

fYear

2005

fDate

17-20 Oct. 2005

Abstract

Infra-red emission microscopy (IREM) has been widely used for physical isolation of several defect mechanisms where "abnormal" photon/thermal emissions are generated. Failures caused by metal shorts, contending nodes or electrical overstress are some of the issues that affect the normal operation of a circuit and result in intense emissions in the near infra-red (NIR) spectrum. IREM has proven successful in locating these faults and in this paper, we expand the usage of this tool by showing its effectiveness in the detection of failures caused by highly resistive nodes. We establish this idea with circuit simulation results and show real Si data that was seen on 65nm process technology products.

Keywords

MOSFET; failure analysis; infrared spectroscopy; semiconductor device testing; 65 nm; IREM usage; MOS devices; abnormal photon emission; abnormal thermal emission; circuit simulation; contending nodes; defect mechanisms; electrical overstress; highly resistive failure detection; highly resistive nodes; infrared emission microscopy; metal shorts; near infrared spectrum; Charge coupled devices; Circuit faults; Circuit simulation; Detectors; Electrical fault detection; Electromyography; Failure analysis; Fault detection; MOS devices; Microscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Reliability Workshop Final Report, 2005 IEEE International

Print_ISBN

0-7803-8992-1

Type

conf

DOI

10.1109/IRWS.2005.1609577

Filename

1609577