DocumentCode
3447208
Title
Can hot carriers “break” thermal oxide
Author
Schlund, Barry
Author_Institution
Space & Syst. Technol. Group, Motorola Inc., Scottsdale, AZ, USA
fYear
1996
fDate
20-23 Oct 1996
Firstpage
166
Abstract
This article was written to understand a comment that was given at the Question and Answer period of a paper presented at ESREF 96 in Enschede, The Netherlands, last October. The question was: “Your model includes only temperature and electric field in dielectric breakdown. We are able to break oxides with no field at all (i.e. with hot carriers). How can you explain that?” This study was conducted to simply calculate the likelihood of breaking Si-O bonds with hot carriers. The calculations indicate that while it is possible for hot carriers to populate traps causing voltage threshold shifting, it is not possible to break an oxide with hot carriers
Keywords
bonds (chemical); dielectric thin films; electric breakdown; hot carriers; silicon compounds; Si-O bond breaking; SiO2; dielectric breakdown; hot carriers; thermal oxide; trap population; voltage threshold shifting; Breakdown voltage; Electric breakdown; Electron traps; Hot carriers; Probability; Space technology; Surface treatment; Testing; Threshold voltage; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Integrated Reliability Workshop, 1996., IEEE International
Conference_Location
Lake Tahoe, CA
Print_ISBN
0-7803-3598-8
Type
conf
DOI
10.1109/IRWS.1996.583405
Filename
583405
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