DocumentCode
3447259
Title
Characterization of EOS induced defects on submicron devices using 2D spectral imaging
Author
Bailon, M.F. ; Salinas, P.F. ; Arboleda, J.S. ; Miranda, J.C.
Author_Institution
Intel Technol. Philippines Inc., Cavite
fYear
2005
fDate
17-20 Oct. 2005
Abstract
Localization, identification and characterization of EOS-induced defects found in submicron devices were demonstrated using a new FA procedure. IR photon emission and circuit analysis were used for defect localization while spectral profile of photon emission was utilized for defect finger-printing analysis. Finally, frontside and backside FA methods were done to confirm the actual failure mechanism in the device under analysis
Keywords
failure analysis; infrared spectroscopy; semiconductor device reliability; semiconductor device testing; 2D spectral imaging; EOS induced defects; IR photon emission; circuit analysis; defect finger-printing analysis; defect localization; failure analysis; failure mechanism; spectral profile; submicron devices; Circuit analysis; Circuit simulation; Earth Observing System; Failure analysis; Image analysis; Integrated circuit technology; Microscopy; Optical imaging; Photoelectricity; Spectral analysis;
fLanguage
English
Publisher
ieee
Conference_Titel
Integrated Reliability Workshop Final Report, 2005 IEEE International
Conference_Location
S. Lake Tahoe, CA
Print_ISBN
0-7803-8992-1
Type
conf
DOI
10.1109/IRWS.2005.1609580
Filename
1609580
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