DocumentCode
3447345
Title
Resistance instability in Cu-damascene structures during the isothermal electromigration test
Author
Impronta, Maurizio ; Farris, Sandro ; Ficola, Antonio ; Scorzoni, Andrea
Author_Institution
Inst. for Microelectron. & Microsyst., Nat. Res. Council of Italy, Bologna
fYear
2005
fDate
17-20 Oct. 2005
Abstract
The isothermal test is a promising wafer-level tool to characterize electromigration also in Cu-damascene metallizations, when a correct temperature determination is employed. In this work an improved feedback algorithm is proposed to reduce the observed resistance instability in the stress phase, when the copper structures are approaching the failure
Keywords
copper; electric reactance measurement; electromigration; integrated circuit metallisation; integrated circuit reliability; thermal resistance; Cu-damascene metallizations; Cu-damascene structures; copper structures; feedback algorithm; isothermal electromigration test; resistance instability; stress phase; wafer-level tool; Copper; Electrical resistance measurement; Electromigration; Electronic equipment testing; Fluctuations; Isothermal processes; Temperature measurement; Thermal conductivity; Thermal resistance; Thermal stresses;
fLanguage
English
Publisher
ieee
Conference_Titel
Integrated Reliability Workshop Final Report, 2005 IEEE International
Conference_Location
S. Lake Tahoe, CA
Print_ISBN
0-7803-8992-1
Type
conf
DOI
10.1109/IRWS.2005.1609584
Filename
1609584
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