Title :
Characterization and modeling NBTI for design-in reliability
Author :
Parthasarathy, C.R. ; Denais, M. ; Huard, V. ; Ribes, G. ; Vincent, E. ; Bravaix, A.
Author_Institution :
STMicroelectronics, Crolles
Abstract :
This paper discusses the characterization and modeling methodology for NBTI for subsequent use in reliability simulations. Given the integral recovery post NBTI stress, we use on-the-fly technique to measure degradation. A new and fully experimental means of interpretation of results from OTF is presented. We also present some new evidence of hole-trapping/detrapping during NBTI degradation
Keywords :
hole traps; integrated circuit design; integrated circuit modelling; integrated circuit reliability; NBTI degradation; design-in reliability; hole detrapping; hole-trapping; integral recovery post NBTI stress; negative bias temperature instability; reliability simulations; CMOS technology; Capacitance; Circuits; Degradation; Monitoring; Niobium compounds; Stress measurement; Time measurement; Titanium compounds; Voltage;
Conference_Titel :
Integrated Reliability Workshop Final Report, 2005 IEEE International
Conference_Location :
S. Lake Tahoe, CA
Print_ISBN :
0-7803-8992-1
DOI :
10.1109/IRWS.2005.1609593
