DocumentCode
3447503
Title
Improving efficiency of Q-switched semiconductor lasers based on type-II quantum wells
Author
Khurgin, Jacob B. ; Kang, Jin U. ; Vurgaftman, I. ; Meyer, J.R.
Author_Institution
Dept. of Electr. & Comput. Eng., Johns Hopkins Univ., Baltimore, MD, USA
fYear
2001
fDate
11-11 May 2001
Firstpage
196
Lastpage
197
Abstract
Summary form only given. We have proposed and evaluated the performance of a novel type-II three-constituent AlGaInAs/AlGaAsSb/AlInAs semiconductor laser capable of delivering very powerful Q-switched pulses with only moderate CW pumping.
Keywords
Q-switching; aluminium compounds; gallium arsenide; indium compounds; optical pumping; quantum well lasers; waveguide lasers; AlGaInAs-AlGaAsSb-AlInAs; Q-switched semiconductor lasers; electron-hole wave function overlap; full waveguide structure; improved efficiency; moderate CW pumping; saturable absorber; separate-confinement regions; subband dispersions; three-constituent multiple quantum well; transparency density; type-II quantum wells; very powerful Q-switched pulses; Diode lasers; Optical beams; Optical devices; Optical microscopy; Optical waveguides; Quantum well lasers; Semiconductor lasers; Signal resolution; Spatial resolution; Stimulated emission;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2001. CLEO '01. Technical Digest. Summaries of papers presented at the Conference on
Conference_Location
Baltimore, MD, USA
Print_ISBN
1-55752-662-1
Type
conf
DOI
10.1109/CLEO.2001.947700
Filename
947700
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