Title :
Discussion Groups (DG) and Special Interest Group (SIG) Summary Reports
Author_Institution :
QUALCOMM
Abstract :
The special interest group discussed the following topics : stress temperature conditions; Kelvin test structures; via chains; and proper choice of upper and lower metal connections
Keywords :
electromigration; integrated circuit metallisation; integrated circuit testing; Kelvin test structures; metal connections; stress migration testing; stress temperature conditions; via chains; Circuit testing; Failure analysis; High K dielectric materials; High-K gate dielectrics; Integrated circuit reliability; Kelvin; Niobium compounds; Reservoirs; Samarium; Stress;
Conference_Titel :
Integrated Reliability Workshop Final Report, 2005 IEEE International
Conference_Location :
S. Lake Tahoe, CA
Print_ISBN :
0-7803-8992-1
DOI :
10.1109/IRWS.2005.1609595
