DocumentCode :
3447568
Title :
IIRW 2005 discussion group summary: negative bias temperature instability
fYear :
2005
fDate :
17-20 Oct. 2005
Abstract :
The negative bias temperature instability (NBTI) is a pMOSFET reliability problem that is most often observed as a shift in threshold voltage (V) in devices subject to moderate negative gate biases at moderately elevated temperatures. Despite the first observations of NBTI more than 30 years ago, it has not been become a major concern until the past few years. The aggravation of NBTI is due to a scaling-induced increase in effective oxide field as well as the addition of nitrogen in the gate dielectric. Many models have been proposed to predict the NBTI phenomenon, but a complete understanding of the NBTI phenomenon has proved elusive
Keywords :
MOSFET; dielectric materials; semiconductor device reliability; NBTI; effective oxide field; gate dielectric; negative bias temperature instability; negative gate biases; pMOSFET reliability problem; threshold voltage; Acceleration; CMOS technology; Dielectric materials; Electric breakdown; Electrodes; High K dielectric materials; High-K gate dielectrics; Materials reliability; NIST; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Integrated Reliability Workshop Final Report, 2005 IEEE International
Conference_Location :
S. Lake Tahoe, CA
Print_ISBN :
0-7803-8992-1
Type :
conf
DOI :
10.1109/IRWS.2005.1609596
Filename :
1609596
Link To Document :
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