Effect of the lateral carrier leakage on performance of 1.3 /spl mu/m InGaAsP MQW CMBH lasers

Author

Shterengas, L. ; Belenky, G.L. ; Reynolds, C.L. ; Hybertsen, Mark S. ; Focht, M. ; Smith, Lee ; Peticolas, L. ; Stampone, D.

Author_Institution

State Univ. of New York, Stony Brook, NY, USA

fYear

2001

fDate

11-11 May 2001

Firstpage

207

Lastpage

208

Abstract

Summary form only given. Leakage current increases threshold, decreases external efficiency and reduces temperature stability of the semiconductor laser. Heterobarrier leakage in InGaAsP/InP lasers was given detailed experimental and theoretical consideration and the design approach for its reduction was developed. The details of lateral leakage are determined by the device design and several different mechanisms can contribute to the net lateral leakage current. We studied the effect of the lateral leakage current on the performance of 1.3 /spl mu/m InGaAsP multiple quantum well (MQW) capped mesa buried heterostructure lasers.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; infrared sources; laser transitions; leakage currents; quantum well lasers; 1.3 micron; InGaAsP MQW lasers; InGaAsP-InP; MQW lasers; capped mesa buried heterostructure; carrier diffusion; external efficiency; heterobarrier leakage; lateral carrier leakage; leakage current; multiple quantum well lasers; semiconductor laser; Laser theory; Leakage current; Optical devices; Optical filters; Optical losses; Optical saturation; Quantum well devices; Semiconductor lasers; Temperature; Threshold current;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2001. CLEO '01. Technical Digest. Summaries of papers presented at the Conference on

Conference_Location

Baltimore, MD, USA

Print_ISBN

1-55752-662-1

Type

conf

DOI

10.1109/CLEO.2001.947711

Filename

947711