Title :
Origin of emission energy blue shift in a 1.3 /spl mu/m GaAsSb type-II quantum well
Author :
Blum, Oliver ; Chow, W.W. ; Klem, John F. ; Schneider, H.C.
Author_Institution :
Albuquerque, Sandia Nat. Labs., Albuquerque, NM, USA
Abstract :
Summary form only given. Vertical-cavity surface-emitting laser (VCSEL) gain structures that can be epitaxially grown on GaAs substrates are of particular interest. One such system is the type-II GaAsSb/GaInAs/GaAs quantum well structure. For this gain structure, experiments found significant increase in the optical emission peak energy with increasing excitation. This blue shift is a serious concern because it is detrimental to long wavelength operation.This paper describes experimental and theoretical investigations of the significant blue shift of the emission peak with increasing injection current in a type-II quantum well. We find the blue shift to depend on the interplay of the competing effects of type-II quantum confinement, and the resulting Coulomb attraction and band distortion.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; laser transitions; photoluminescence; quantum well lasers; semiconductor quantum wells; spectral line shift; 1.3 /spl mu/m GaAsSb type-II quantum well; 1.3 micron; Coulomb attraction; GaAsSb; VCSELs; band distortion; blue shift; emission energy blue shift; gain structures; long wavelength operation; optical emission peak energy; semiconductor gain media; type-II quantum well; vertical-cavity surface-emitting lasers; Gallium arsenide; Laser excitation; Optical distortion; Optical surface waves; Quantum mechanics; Quantum well lasers; Stimulated emission; Substrates; Surface emitting lasers; Vertical cavity surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics, 2001. CLEO '01. Technical Digest. Summaries of papers presented at the Conference on
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-662-1
DOI :
10.1109/CLEO.2001.947714
