InGaAsNSb: a novel material for long-wavelength semiconductor lasers

Summary form only given. InGaAsNSb/GaAs QWs were grown by solid-source molecular beam epitaxy using a N/sub 2/ radio frequency (RF) plasma source. X-ray diffraction (XRD), reflection high-energy electron diffraction (RHEED), and transmission electron microscopy (TEM) studies indicate that Sb suppresses the three dimensional growth and improves the interface of the QWs, acting as a surfactant. Sb incorporation was also investigated by secondary ion mass spectroscpy (SIMS). A 1.53 /spl mu/m photoluminescence was obtained from InGaAsNSb/GaAs multiple quantum wells (MQW) at room temperature, which demonstrates the feasibility of InGaAsNSb for 1.55 /spl mu/m lasers. InGaAsNSb/GaAs QW broad area lasers were fabricated to study the effect of adding Sb on the laser performance.