Title :
Improvement of a-Si:H and nc-Si:H multi-junction solar cells by optimization of textured back reflectors
Author :
Yue, Guozhen ; Yan, Baojie ; Sivec, Laura ; Owens, Jessica M. ; Hu, Sherry ; Xu, Xixiang ; Yang, Jeffrey ; Guha, Subhendu
Author_Institution :
United Solar Ovonic LLC, Troy, MI, USA
Abstract :
The effect of the texture of Ag/ZnO back reflector (BR) on nc-Si:H single-junction solar cell performance has been investigated systematically. Using a high textured BR, a 74% gain in short circuit current density (Jsc) was obtained over a cell made using the same recipe on specular stainless steel. However, the texture reduced the fill factor (FF) from 0.73 to 0.54. Dark current versus voltage measurements showed a significant increase in reverse saturate current when the texture is increased, indicating a poor nc-Si:H material quality in the nc-Si:H cells deposited on highly textured Ag/ZnO BR. In order to maintain both high Jsc and FF, we have optimized the BR texture. With the improved BR, we have achieved initial efficiencies of 9.5% in a nc-Si:H single-junction and 13.4% in an a-Si:H/nc-Si:H/nc-Si:H triple-junction solar cells made at 10 ¿/s.
Keywords :
II-VI semiconductors; amorphous semiconductors; current density; dark conductivity; hydrogen; nanostructured materials; semiconductor heterojunctions; semiconductor-metal boundaries; short-circuit currents; silicon; silver; solar cells; wide band gap semiconductors; zinc compounds; Ag-ZnO; Si:H; back reflector; dark current; fill factor; multi-junction solar cells; reverse saturate current; short circuit current density; single-junction solar cell; texture; triple-junction solar cells; Atomic beams; Atomic force microscopy; Light scattering; Photovoltaic cells; Short circuit currents; Steel; Surface morphology; Surface texture; Wavelength measurement; Zinc oxide;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE
Conference_Location :
Philadelphia, PA
Print_ISBN :
978-1-4244-2949-3
Electronic_ISBN :
0160-8371
DOI :
10.1109/PVSC.2009.5411668