DocumentCode
3448192
Title
Understanding the physics of Carrier-Multiplication and intermediate-band solar cells based on nanostructures - What is going on?
Author
Zunger, Alex ; Franceschetti, Alberto ; Luo, Jun-Wei ; Popescu, Voicu
Author_Institution
Nat. Renewable Energy Lab., Golden, CO, USA
fYear
2009
fDate
7-12 June 2009
Abstract
The concepts of (1) Carrier-Multiplication (CM - ¿two electron-hole pairs from one photon¿) and (2) Intermediate Band Solar Cell (IBSC) based on nanostructures, have created significant interest and excitement, but, at the same time, raised questions pertaining to the approaches used to argue their validity. In part, confusion arose because the initial arguments made were based on rather qualitative, if not nai¿ve, physical models. Here we propose to use the tools of modern theory of nanostructures for examining these concepts. Simple but surprising physical pictures emerge from such complex atomistic calculations. We will review and discuss the underlying concepts and experiments surrounding CM and quantum dot-based IBSC, delineating fact from fiction, and pointing to some new, important unanswered questions.
Keywords
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; nanostructured materials; semiconductor quantum dots; solar cells; In0.47Ga0.53As-GaAs0.86P0.14; carrier multiplication; complex atomistic calculations; electron-hole pairs; intermediate band solar cells; nanostructures; quantum dots; Excitons; Nanocrystals; Nanostructured materials; Nanostructures; Photonic band gap; Photovoltaic cells; Physics; Quantum dots; Semiconductor materials; Solar power generation;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE
Conference_Location
Philadelphia, PA
ISSN
0160-8371
Print_ISBN
978-1-4244-2949-3
Electronic_ISBN
0160-8371
Type
conf
DOI
10.1109/PVSC.2009.5411671
Filename
5411671
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