DocumentCode :
344824
Title :
Project of semiconductor high-power high-repetition rate compact accelerator
Author :
Galstjan, E. ; Kazanskiy, L.
Author_Institution :
MRTI, Moscow, Russia
Volume :
3
fYear :
1999
fDate :
1999
Firstpage :
1477
Abstract :
The paper describes the project of a compact accelerator (120 kV, 2 kA, 15-25 ns pulse duration, 1 kHz repetition rate). To attract the attention of the accelerator community to the abilities of modern power fast semiconductors, this device is suggested by using modern high-power super-fast semiconductor switches
Keywords :
particle accelerators; power semiconductor switches; 1 kHz; 120 kV; 15 to 25 ns; 2 kA; high-power superfast semiconductor switches; power fast semiconductor; semiconductor high-power high-repetition rate compact accelerator; Acceleration; Capacitors; Inductors; Jitter; Magnetic switching; Modems; Semiconductivity; Semiconductor devices; Switches; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Particle Accelerator Conference, 1999. Proceedings of the 1999
Conference_Location :
New York, NY
Print_ISBN :
0-7803-5573-3
Type :
conf
DOI :
10.1109/PAC.1999.794139
Filename :
794139
Link To Document :
بازگشت