DocumentCode :
3448254
Title :
Effect of lattice strains in the measurement of the (220) lattice spacing of silicon
Author :
Mana, Giovanni ; Palmisano, Carlo ; Zosi, Gianfranco
Author_Institution :
Ist. di Metrologia G. Colonnetti, Torino
fYear :
2004
fDate :
38139
Firstpage :
443
Lastpage :
444
Abstract :
The measurement of the Si lattice parameter a0 with an uncertainty lower than 10-8, requires to study the role of lattice strains of various kind. The Takagi´s approach has been used to study the modulation parameters of outgoing X-ray beams
Keywords :
X-ray spectroscopy; crystal structure; lattice constants; silicon; (220) lattice spacing measurement; Takagi´s approach; X-ray beams; lattice parameter; lattice strains effect; silicon; Atomic measurements; Capacitive sensors; Density measurement; Equations; Finite element methods; Lattices; Optical modulation; Silicon; Spectroscopy; Strain measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Precision Electromagnetic Measurements Digest, 2004 Conference on
Conference_Location :
London
Print_ISBN :
0-7803-8494-6
Electronic_ISBN :
0-7803-8494-6
Type :
conf
DOI :
10.1109/CPEM.2004.305301
Filename :
4097312
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3448254
بازگشت