Title :
VOC losses on CIS photovoltaic devices: Theoretical identification and quantification.
Author :
Ruiz, C.M. ; Bermúdez, V.
Author_Institution :
Inst. de Rech. et Dev. sur l´´Energie Photovoltaique (IRDEP), Chatou, France
Abstract :
On this paper, we have studied the effect of the quality of different layers and their influence on the Voc of a standard CISEL¿ cell. The objective is to asset the magnitude of the global losses and to identify the responsibility of each layer on this final value. For this, we have carried several simulations with the SCAPS2.7.03 software. We propose a model for the standard cell, and then we substitute the optimal layers for another with known issues on the different materials. Then some experimental examples are compared with the model to validate it.
Keywords :
II-VI semiconductors; cadmium compounds; copper compounds; indium compounds; losses; molybdenum compounds; semiconductor device models; solar cells; ternary semiconductors; wide band gap semiconductors; zinc compounds; CIS photovoltaic device; CISEL cell; MoS2-CuInS2-CuIn(SSe)2-CdS-ZnO; SCAPS2.7.03 software; VOC losses; global losses; material properties; open circuit voltage; photovoltaic cell model; solar cells; Charge carrier density; Computational Intelligence Society; Conductivity; Costs; Crystallization; Material properties; Photovoltaic systems; Solar power generation; Space charge; Standards development;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE
Conference_Location :
Philadelphia, PA
Print_ISBN :
978-1-4244-2949-3
Electronic_ISBN :
0160-8371
DOI :
10.1109/PVSC.2009.5411674
