• DocumentCode
    344829
  • Title

    Solid state modulator applications in linear accelerators

  • Author

    Gaudreau, M.P.J. ; Casey, J.A. ; Hawkey, T.P. ; Mulvaney, J.M. ; Kempkes, M.A. ; Planck, P. Ver

  • Author_Institution
    Diversified Technol. Inc., Bedford, MA, USA
  • Volume
    3
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    1491
  • Abstract
    The next generation of linear colliders will require an order of magnitude leap in pulsed power to millions of volts at thousands of amperes, delivered at much higher efficiency than is presently available. The current technology base of thyratrons, PFNs, etc., is inherently limited in scaling to meet these new requirements. Diversified Technologies Inc. (DTI), has had tremendous success since 1993 in the application of high voltage IGBT devices to large, high-voltage and high-current modulator systems. DTI has sold commercial solid-state modulators capable of 20 to 160 kV and 150 to 2000 A for customer applications ranging from RF tube testing to ion-implantation. This technology is rapidly becoming the preferred alternative to conventional vacuum tube modulators and switches for future accelerator designs
  • Keywords
    high-voltage engineering; insulated gate bipolar transistors; linear colliders; power bipolar transistors; pulse modulation; pulsed power supplies; 150 to 2000 A; 20 to 160 kV; high voltage IGBT devices; insulated gate bipolar transistors; linear accelerators; linear colliders; pulsed power; solid state modulator applications; Diffusion tensor imaging; Electron tubes; Insulated gate bipolar transistors; Linear accelerators; Radio frequency; Solid state circuits; Testing; Thyratrons; Vacuum technology; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Particle Accelerator Conference, 1999. Proceedings of the 1999
  • Conference_Location
    New York, NY
  • Print_ISBN
    0-7803-5573-3
  • Type

    conf

  • DOI
    10.1109/PAC.1999.794144
  • Filename
    794144