DocumentCode
344829
Title
Solid state modulator applications in linear accelerators
Author
Gaudreau, M.P.J. ; Casey, J.A. ; Hawkey, T.P. ; Mulvaney, J.M. ; Kempkes, M.A. ; Planck, P. Ver
Author_Institution
Diversified Technol. Inc., Bedford, MA, USA
Volume
3
fYear
1999
fDate
1999
Firstpage
1491
Abstract
The next generation of linear colliders will require an order of magnitude leap in pulsed power to millions of volts at thousands of amperes, delivered at much higher efficiency than is presently available. The current technology base of thyratrons, PFNs, etc., is inherently limited in scaling to meet these new requirements. Diversified Technologies Inc. (DTI), has had tremendous success since 1993 in the application of high voltage IGBT devices to large, high-voltage and high-current modulator systems. DTI has sold commercial solid-state modulators capable of 20 to 160 kV and 150 to 2000 A for customer applications ranging from RF tube testing to ion-implantation. This technology is rapidly becoming the preferred alternative to conventional vacuum tube modulators and switches for future accelerator designs
Keywords
high-voltage engineering; insulated gate bipolar transistors; linear colliders; power bipolar transistors; pulse modulation; pulsed power supplies; 150 to 2000 A; 20 to 160 kV; high voltage IGBT devices; insulated gate bipolar transistors; linear accelerators; linear colliders; pulsed power; solid state modulator applications; Diffusion tensor imaging; Electron tubes; Insulated gate bipolar transistors; Linear accelerators; Radio frequency; Solid state circuits; Testing; Thyratrons; Vacuum technology; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Particle Accelerator Conference, 1999. Proceedings of the 1999
Conference_Location
New York, NY
Print_ISBN
0-7803-5573-3
Type
conf
DOI
10.1109/PAC.1999.794144
Filename
794144
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