Title :
Impulse ion implanter
Author :
Stepanov, A.V. ; Shamanin, V.I. ; Remnev, G.E. ; Petrov, A.V.
Author_Institution :
Tomsk Polytech. Univ., Tomsk, Russia
Abstract :
Summary form only given. The article presents high-current impulse implanter based on ion diode with Br-magnetic field and the preliminary plasma formation. Plasma formation at the anode is realized by a voltage negative pulse prior accelerating voltage pulse with a pause between the pulses of 500±50 ns. As the emissive coating of the anode graphite is used. The obtained ion beam has a current density in the focal plane of the diode to 80 A/cm2. Elemental analysis showed the ion beam is mainly composed of carbon ions C+ and C+2 and the protons H+. This work was supported RFBR and RSCF.
Keywords :
anodes; current density; graphite; ion beams; plasma diodes; plasma immersion ion implantation; plasma production; plasma transport processes; Br-magnetic field; C; accelerating voltage pulse; anode graphite; current density; elemental analysis; emissive coating; high-current impulse implanter; impulse ion implanter; ion beam; ion diode; preliminary plasma formation; voltage negative pulse; Acceleration; Anodes; Coatings; Current density; Graphite; Ion beams; Plasmas;
Conference_Titel :
Plasma Sciences (ICOPS), 2015 IEEE International Conference on
Conference_Location :
Antalya
DOI :
10.1109/PLASMA.2015.7179874
