Title :
Density Measurement of Thin-Film by Pressure-of-Flotation Method
Author :
Waseda, A. ; Fujii, K.
Author_Institution :
National Metrol. Inst. of Japan, National Inst. of Adv. Ind. Sci. & Technol., Ibaraki
Abstract :
Measurements on density differences of silicon crystals by pressure-of-flotation method (PFM) are presented. Temperature stability of the PFM apparatus is being unproved so that more accurate measurement is realized. The PFM is applied for the first time to measure density and thickness of surface layer on silicon crystals
Keywords :
density measurement; elemental semiconductors; semiconductor thin films; stability; thickness measurement; PFM apparatus; Si; density measurement; pressure-of-flotation method; silicon crystals; surface layer; temperature stability; thickness measurement; thin-film; Crystals; Density measurement; Electrical resistance measurement; Silicon; Stability; Substrates; Temperature control; Thickness measurement; Time measurement; Transistors;
Conference_Titel :
Precision Electromagnetic Measurements Digest, 2004 Conference on
Conference_Location :
London
Print_ISBN :
0-7803-8494-6
Electronic_ISBN :
0-7803-8494-6
DOI :
10.1109/CPEM.2004.305306
