DocumentCode :
3448351
Title :
Effect of pretreatment on PET films and its application for flexible amorphous silicon solar cells
Author :
Ni, Jian ; Zhang, Jianjun ; Xue, Junming ; Wang, Xianbao ; Cao, Liran ; Wu, Chunya ; Xiong, Shaozhen ; Geng, Xinhua ; Zhao, Ying
Author_Institution :
Inst. of Photoelectron., Nankai Univ., Tianjin, China
fYear :
2009
fDate :
7-12 June 2009
Abstract :
We proposed a low cost solution of flexible amorphous silicon solar cells on Polyethylene terephthalate(PET) polymer substrates deposited at low temperatures. PET films were firstly annealed both in the air and in vacuum at different temperatures, and the properties of PET films after annealing were evaluated. Then PET films were exposed to glow discharge Argon plasma in a standard PECVD system to improve their surface properties. The relationship between glow discharge parameters and the energy of Ar plasma were investigated by OES. After Ar plasma treatment, not only the surface morphology of PET but also the adhesion of the solar cell thin films to the PET substrates were improved. Finally, single junction a-Si solar cells with a p-i-n superstrate type were fabricated on PET/ITO substrates at low temperature of Ts=125°C, and an initial efficiency of 4.8% was obtained.
Keywords :
adhesion; amorphous semiconductors; elemental semiconductors; glow discharges; plasma diagnostics; plasma materials processing; polymer films; semiconductor thin films; silicon; solar cells; surface morphology; surface treatment; thin film devices; OES; PET films; Si; adhesion; annealing; flexible amorphous silicon solar cells; glow discharge plasma; optical emission spectroscopy; p-i-n superstrate; polyethylene terephthalate; polymer substrates; single junction solar cells; surface morphology; temperature 125 degC; Amorphous silicon; Annealing; Argon; Glow discharges; Photovoltaic cells; Plasma properties; Plasma temperature; Positron emission tomography; Semiconductor films; Surface discharges;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE
Conference_Location :
Philadelphia, PA
ISSN :
0160-8371
Print_ISBN :
978-1-4244-2949-3
Electronic_ISBN :
0160-8371
Type :
conf
DOI :
10.1109/PVSC.2009.5411679
Filename :
5411679
Link To Document :
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