• DocumentCode
    3448351
  • Title

    Effect of pretreatment on PET films and its application for flexible amorphous silicon solar cells

  • Author

    Ni, Jian ; Zhang, Jianjun ; Xue, Junming ; Wang, Xianbao ; Cao, Liran ; Wu, Chunya ; Xiong, Shaozhen ; Geng, Xinhua ; Zhao, Ying

  • Author_Institution
    Inst. of Photoelectron., Nankai Univ., Tianjin, China
  • fYear
    2009
  • fDate
    7-12 June 2009
  • Abstract
    We proposed a low cost solution of flexible amorphous silicon solar cells on Polyethylene terephthalate(PET) polymer substrates deposited at low temperatures. PET films were firstly annealed both in the air and in vacuum at different temperatures, and the properties of PET films after annealing were evaluated. Then PET films were exposed to glow discharge Argon plasma in a standard PECVD system to improve their surface properties. The relationship between glow discharge parameters and the energy of Ar plasma were investigated by OES. After Ar plasma treatment, not only the surface morphology of PET but also the adhesion of the solar cell thin films to the PET substrates were improved. Finally, single junction a-Si solar cells with a p-i-n superstrate type were fabricated on PET/ITO substrates at low temperature of Ts=125°C, and an initial efficiency of 4.8% was obtained.
  • Keywords
    adhesion; amorphous semiconductors; elemental semiconductors; glow discharges; plasma diagnostics; plasma materials processing; polymer films; semiconductor thin films; silicon; solar cells; surface morphology; surface treatment; thin film devices; OES; PET films; Si; adhesion; annealing; flexible amorphous silicon solar cells; glow discharge plasma; optical emission spectroscopy; p-i-n superstrate; polyethylene terephthalate; polymer substrates; single junction solar cells; surface morphology; temperature 125 degC; Amorphous silicon; Annealing; Argon; Glow discharges; Photovoltaic cells; Plasma properties; Plasma temperature; Positron emission tomography; Semiconductor films; Surface discharges;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE
  • Conference_Location
    Philadelphia, PA
  • ISSN
    0160-8371
  • Print_ISBN
    978-1-4244-2949-3
  • Electronic_ISBN
    0160-8371
  • Type

    conf

  • DOI
    10.1109/PVSC.2009.5411679
  • Filename
    5411679