DocumentCode :
3448406
Title :
Development of APCVD process for high quality TCO
Author :
Van Deelen, Joop ; Van Mol, Ton ; Poodt, Paul ; Grob, Frank ; Spee, Karel
Author_Institution :
TNO Sci. & Ind., Eindhoven, Netherlands
fYear :
2009
fDate :
7-12 June 2009
Abstract :
For the past decade TNO has been involved in the research and development of atmospheric pressure CVD (APCVD) and plasma enhanced CVD (PECVD) processes for deposition of transparent conductive oxides (TCO), such as tin oxide and zinc oxide. The use of atmospheric deposition processes allows for large scale roll to roll manufacturing, and is therefore expected to provide a breakthrough for lowering the price of thin film PV modules.
Keywords :
II-VI semiconductors; plasma CVD; semiconductor growth; semiconductor thin films; tin compounds; wide band gap semiconductors; zinc compounds; SnO2; TCO; ZnO; atmospheric pressure CVD; plasma enhanced CVD; thin film PV modules; transparent conductive oxides; Conductive films; Conductivity; Glass; Inductors; Large-scale systems; Photovoltaic cells; Plasma applications; Research and development; Sputtering; Tin;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE
Conference_Location :
Philadelphia, PA
ISSN :
0160-8371
Print_ISBN :
978-1-4244-2949-3
Electronic_ISBN :
0160-8371
Type :
conf
DOI :
10.1109/PVSC.2009.5411680
Filename :
5411680
Link To Document :
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